Location History:
- Hsin-Chu, TW (2001)
- Jubei, TW (2003)
Company Filing History:
Years Active: 2001-2003
Title: Fu-Jier Fahn: Innovator in Microelectronic Fabrication
Introduction
Fu-Jier Fahn is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of microelectronics, particularly in the development of innovative fabrication methods. With a total of 3 patents to his name, Fahn continues to push the boundaries of technology.
Latest Patents
One of Fu-Jier Fahn's latest patents is a method for forming a patterned conductor layer passivation. This method involves providing a substrate and forming a patterned conductor layer with topographic variations. A planarizing passivation layer is then formed over the substrate to passivate these variations. The process culminates in thermally annealing the microelectronic fabrication to stabilize the passivation layer. Another notable patent involves implanting nitrogen into a pad oxide film to mask the active region, allowing for the growth of field oxide without the need for a silicon nitride film. This innovative approach enhances the efficiency of microelectronic fabrication.
Career Highlights
Fu-Jier Fahn is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing microelectronic technologies, making him a valuable asset to his organization.
Collaborations
Throughout his career, Fahn has collaborated with notable colleagues, including Kuo-Wei Lin and James Chen. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Fu-Jier Fahn's contributions to microelectronic fabrication are noteworthy, with his innovative patents paving the way for advancements in the field. His work at Taiwan Semiconductor Manufacturing Company Limited and collaborations with esteemed colleagues further highlight his impact on technology.