The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
May. 27, 1999
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
This invention relates to the fabrication of integrated circuit devices and more particularly to an improved, graded, silicon oxynitride process step, in order to form an unconventional dielectric layer, having an adjustable effective dielectric constant, for the purpose of fabricating capacitors for both DRAM and Logic technologies. During the special CVD process for the oxynitride layer, its composition is varied such that three distinct regions are created in the direction of film growth. The dielectric property of the lower region is close to silicon oxide, the dielectric property of the upper region is close to silicon oxynitride and the dielectric property of the intermediate transition zone is between that of silicon oxide and oxynitride. Suitable adjustment of the the relative thickness of the transition zone, of the resultant Silicon-Oxide-OxyNitride, SOON, layer, is used as a convenient means of obtaining low cost, adjustable, values of increased capacitance per unit area, while also maintaining a constant overall dielectric thickness.