The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Jan. 04, 1999
Applicant:
Inventors:
Fu-Jier Fahn, Hsin-Chu, TW;
Fang-Chang Liu, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method whereby the region where the field oxide has to be grown is defined with a layer of photoresist. The present invention teaches the implantation of N,into the layer of silicon dioxide (SiO,) that is not covered by the layer of photoresist. The photoresist is removed and the field oxide (FOX) is grown in the areas from where the photoresist has been removed.