Fu-Hsing Shen

Title: Fu-Hsing Shen and a Patent for Preventing Silicon Hole Defects

Introduction

Fu-Hsing Shen is an inventor associated with Hsinchu, Taiwan, and Taiwan Semiconductor Manufacturing Company Limited. His patent work addresses a wet-cleaning challenge in semiconductor wafer processing: preventing silicon hole defects caused by ammonia vapor.

Latest Patents

Shen is listed as an inventor on one patent, 1 patent: “Method and Apparatus for Preventing Silicon Hole Defect Formation After Wet Cleaning.” The invention describes a wet-cleaning system with a supply tank and a cleaning tank connected by a conduit. A cooling tube wrapped around the conduit carries water below 20°C to help prevent ammonia vapor from forming near the cleaning and rinse tanks. The apparatus may also include a pump, a safety overflow conduit, and a flow-control valve. By reducing exposure to concentrated aqueous ammonia, the method aims to prevent silicon hole defects on wafer surfaces.

Career Highlights

Shen’s listed patent is focused on improving process control and protecting silicon wafers during wet cleaning. The disclosed approach combines temperature management with fluid-handling components in a semiconductor cleaning station.

Collaborations

The patent lists Bor-Hann Hsieh and Jeng-Lian Lin as Shen’s coworkers. Their inclusion reflects a collaborative context for the invention, though the available information does not specify their individual contributions.

Conclusion

Fu-Hsing Shen’s patent presents a practical approach to reducing ammonia-vapor formation during wafer cleaning and preventing related silicon hole defects.