The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Mar. 31, 1999
Bor-Hann Hsieh, Chung-Li, TW;
Fu-Hsing Shen, Hsin-chu, TW;
Jeng-Lian Lin, Hsing Yun Lin, TW;
Hui-Ming Chu, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin Chu, TW;
Abstract
A method and an apparatus for preventing silicon hole defect formation on a silicon wafer after a wet cleaning process are disclosed. In the method, a supply tank and a cleaning tank are provided which are connected together in fluid communication by a conduit. The conduit is cooled by a wrapped around cooling tube and a cooling water flowing through the tube at a temperature of less than 20° C. The apparatus of the wet cleaning station may further include a pump for transporting an aqueous solution of ammonia from the supply tank to the cleaning tank, a safety overflow conduit for protecting the supply tank that holds the aqueous solution of ammonia, and a flow control valve in the conduit between the supply tank and the cleaning tank. The present invention novel method and apparatus effectively prevents the formation of ammonia vapor in the mini-environment that surrounds the cleaning tank and the rinse tank. The silicon hole defect frequently found on the surface of a wafer caused by attacks from concentrated aqueous solution of ammonia can be avoided.