Fritz L Schuermeyer

Title: The Innovations of Fritz L Schuermeyer

Introduction

Fritz L Schuermeyer is a notable inventor based in Yellow Springs, Ohio, with a remarkable portfolio of nine patents. His work primarily focuses on advancements in semiconductor technology, particularly in the fabrication of complementary field effect transistors.

Latest Patents

One of Schuermeyer's latest patents is the "Twin-tub complementary heterostructure field effect transistor fab." This innovative fabrication process involves constructing complementary III-V HFETs side-by-side in doped areas, known as 'tubs', which are grown by molecular beam epitaxy on indium phosphide (InP) substrates. The process includes several layers, such as a semi-insulating buffer layer of InAlAs, an InGaAs channel, an InAlAs barrier layer, and an InGaAs cap layer, all of which are lattice matched or pseudomorphic to the InP substrate. The method also details the steps of mesa etching, high-temperature silicon nitride deposition, and the formation of n-well and p-well areas through ion implantation and annealing.

Another significant patent involves the "Making staggered complementary heterostructure FET." This technique aims to implement complementary field effect transistors in group III/group V compound semiconductors, particularly on InP substrates. The structure includes both n-channel and p-channel devices on the same substrate, showcasing the potential of C-HFET technology. The p-channel area consists of GaAsSb, which is lattice matched to the InP substrate, while the n-channel FETs utilize ion implantation for contact formation.

Career Highlights

Throughout his career, Schuermeyer has contributed significantly to the field of semiconductor technology. His innovative approaches have led to advancements in the performance of n-channel and p-channel devices, making him a respected figure in the industry.

Collaborations

Schuermeyer has collaborated with notable individuals such as Charles R Young and Paul E Cook, further enhancing his contributions to the field.

Conclusion

Fritz L Schuermeyer is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the fabrication of complementary field effect transistors. His innovative patents and collaborations highlight his impact on the industry.