The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1983
Filed:
May. 20, 1981
Applicant:
Inventor:
Fritz L Schuermeyer, Yellow Springs, OH (US);
Assignee:
Other;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365154 ; 307279 ;
Abstract
The memory cell uses GaAs MESFET depletion mode devices, with a pair of cross coupled active transistors, a pair of load transistors, and a pair of access transistors. The level shifting required for Schottky Barriers is provided by capacitors in the cross coupling. A pair of initiation transistors are connected between the load and active transistors.