The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 1984
Filed:
May. 07, 1981
Applicant:
Inventor:
Fritz L Schuermeyer, Yellow Springs, OH (US);
Assignee:
Other;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ;
U.S. Cl.
CPC ...
307450 ; 307475 ; 377121 ; 377117 ;
Abstract
GaAs digital electronics uses mainly depletion mode MESFET technology. In typical circuits, negative voltage logic input signals are required while the output voltage is positive. To connect gates, level shifters are needed to shift the positive voltage output signals such that they become suitable for the input to the next gate. A capacitor is used which performs the level shifting. As the charge leaks off the capacitor, the voltage level has to be readjusted periodically, leading to a 'dynamic' circuit. A method for self-biasing of the capacitor for readjustment of the voltage level is taught.