This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 2009.
Company Filing History:
Years Active: 2009
Title: Freidoon Mehard: Innovator in Microelectronics
Introduction
Freidoon Mehard is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of microelectronics, particularly through his innovative patent. His work is recognized for its impact on the fabrication of microelectronics devices.
Latest Patents
Freidoon Mehard holds a patent titled "Method to obtain fully silicided poly gate." This invention provides a method for fabricating a microelectronics device. The method involves forming a spacer material over gate electrodes, which are located over a microelectronics substrate. A doped region is situated between the gate electrodes. The process includes removing a portion of the spacer material using a chemical/mechanical process with a selective slurry. The remaining portion of the spacer material is then etched to form sidewalls on the gate electrodes, exposing the surface of the gate electrodes while leaving some spacer material over the doped region. Finally, metal is incorporated into the gate electrodes to create silicided gate electrodes. Freidoon Mehard has 1 patent to his name.
Career Highlights
Freidoon Mehard is associated with Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to contribute to advancements in microelectronics technology.
Collaborations
Freidoon has collaborated with notable coworkers, including Shafoeng Yu and Joe G Tran. Their combined expertise has furthered the development of innovative solutions in their field.
Conclusion
Freidoon Mehard's contributions to microelectronics through his patent demonstrate his innovative spirit and dedication to advancing technology. His work continues to influence the industry and inspire future innovations.