Texas Instruments Corporation

Freidoon Mehard

Joe G Tran

Shafoeng Yu

The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises forming a spacer materialover gate electrodesthat are, in turn, located over a microelectronics substrate. The gate electrodeshave a doped regionlocated between them. A portion of the spacer materialis removed with a chemical/mechanical process using a slurry that is selective to a portion of the spacer material. The method further comprises etching a remaining portion of the spacer materialto form spacer sidewallson the gate electrodes. The etching exposes a surface of the gate electrodesand leaves a portion of the spacer materialover the doped region. Metal is then incorporated into the gate electrodesto form silicided gate electrodes

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Plano, TX, United States of America

Freidoon Mehard