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For the Inventor, By the Inventor

Vestal, NY, United States of America

Francis Joseph Downes, Jr

USPTO Granted Patents = 17

Average Co-Inventor Count = 4.3

ph-index = 9

Forward Citations = 176(Granted Patents)


Company Filing History:

goldMedal17 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1993-2005

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17 patents (USPTO):
1. 6887779 - Integrated circuit structure (2005-05-03),
2. 6829823 - Method of making a multi-layered interconnect structure (2004-12-14),
3. 6720502 - Integrated circuit structure (2004-04-13),
4. 6693031 - Formation of a metallic interlocking structure (2004-02-17),
5. 6626196 - Arrangement and method for degassing small-high aspect ratio drilled holes prior to wet chemical processing (2003-09-30),
6. 6569604 - Blind via formation in a photoimageable dielectric material (2003-05-27),
7. 6429384 - Chip C4 assembly improvement using magnetic force and adhesive (2002-08-06),
8. 6373717 - Electronic package with high density interconnect layer (2002-04-16),
9. 6348737 - Metallic interlocking structure (2002-02-19),
10. 6176985 - Laminated electroplating rack and connection system for optimized plating (2001-01-23),
11. 6150255 - Method of planarizing a curved substrate and resulting structure (2000-11-21),
12. 6142361 - Chip C4 assembly improvement using magnetic force and adhesive (2000-11-07),
13. 6043150 - Method for uniform plating of dendrites (2000-03-28),
14. 5994910 - Apparatus, and corresponding method, for stress testing wire bond-type (1999-11-30),
15. 5940729 - Method of planarizing a curved substrate and resulting structure (1999-08-17),

Title: **The Innovative Mind of Francis Joseph Downes, Jr.**

Introduction

Francis Joseph Downes, Jr. is a prominent inventor based in Vestal, NY, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 17 patents, Downes has made substantial advancements that have impacted the electronics industry.

Latest Patents

Among his latest innovations, Downes has developed an integrated circuit structure that features a semiconductor chip carrier with increased chip connector and plated through hole density. This invention includes a substrate with multiple plated through holes and a fatigue-resistant redistribution layer, enhancing electrical connectivity and reliability. Additionally, he has patented a method for creating a multi-layered interconnect structure, which involves the formation of electrically conductive members on dielectric layers and the incorporation of shielded signal conductors for efficient signal transmission.

Career Highlights

Throughout his career, Downes has been associated with the International Business Machines Corporation (IBM), a leading company in technology and innovation. His work at IBM not only underscores his technical expertise but also highlights his dedication to advancing the field of electronic components and systems.

Collaborations

Downes has had the opportunity to collaborate with talented colleagues such as John Steven Kresge and Robert Maynard Japp, who have contributed to the development of groundbreaking technologies alongside him. Their collective efforts in research and development have played a crucial role in bringing innovative ideas to fruition.

Conclusion

Francis Joseph Downes, Jr. stands out as a remarkable inventor whose work continues to influence the semiconductor industry. With a strong foundation in electrical engineering and a commitment to innovation, Downes’ contributions are sure to leave a lasting impact on technology for years to come.

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