Francis C Huin

Title: The Innovations of Francis C Huin

Introduction

Francis C Huin is a notable inventor based in Soullans, France. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of power amplifiers and semiconductor devices.

Latest Patents

One of Huin's latest patents is titled "Capacitive cross-coupling and harmonic rejection." This invention describes a power amplifier that includes a first cascode with a MOSFET and a JFET, along with a capacitor connected between the source and drain of the JFET. By utilizing two such power amplifiers in parallel, a differential power amplifier is formed. Additionally, a second capacitor can be connected between the source and drain of the second JFET. Another significant patent is the "High breakdown voltage double-gate semiconductor device." This device features a MOS gate and a junction gate, where the bias of the junction gate is influenced by the gate voltage of the MOS gate. This innovation provides improved RF capability and operability at higher power levels compared to conventional transistor devices.

Career Highlights

Throughout his career, Huin has worked with several companies, including Acco Semiconductor, Inc. and Acco Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Huin has collaborated with notable individuals in the field, including Denis A Masliah and Alexandre G Bracale. These collaborations have likely enriched his work and led to further advancements in his inventions.

Conclusion

Francis C Huin's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative designs continue to impact the industry and pave the way for future advancements.