The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Nov. 02, 2015
Applicant:

Acco, Louveciennes, FR;

Inventors:

Christophe Boyavalle, Triel sur Seine, FR;

Denis A. Masliah, St.-Germain en Laye, FR;

Francis C. Huin, Soullans, FR;

Assignee:

ACCO, Louveciennes, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01); H03F 1/22 (2006.01); H03F 1/02 (2006.01); H03F 3/193 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0205 (2013.01); H03F 3/1935 (2013.01); H03F 3/211 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21106 (2013.01);
Abstract

A power amplifier of the present invention comprises a first cascode including a MOSFET and a JFET and a first capacitor electrically connected between the source and the drain of the JFET. Two such power amplifiers in parallel form a differential power amplifier. In the differential amplifier a second capacitor can be electrically connected between the source and the drain of the second JFET. Another differential power amplifier comprises a first capacitor electrically connected between the gate of the first MOSFET and the source of the second MOSFET, and a second capacitor electrically connected between the gate of the second MOSFET and the source of the first MOSFET. Some of these differential power amplifiers also include capacitors electrically connected between the sources and the drains of the JFETs.


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