Milan, Italy

Francesco Franco

This inventor holds 2 USPTO granted patents. Top assignee: Stmicroelectronics International N.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Francesco Franco. Retrieved from https://idiyas.com/inventor/francesco-franco

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Francesco Franco: Innovator in Circuit Design

Introduction

Francesco Franco is a notable inventor based in Milan, Italy. He has made significant contributions to the field of circuit design, particularly in the area of transistor gate stress testing. His innovative approach has led to the development of a unique patent that enhances the reliability of electronic components.

Latest Patents

Francesco holds a patent for a "Gate stress test architecture." This invention proposes a circuit designed for transistor gate stress testing. The circuit includes a first p-channel MOSFET with its drain linked to the transistor's gate, a second p-channel MOSFET coupling its source to the first p-channel MOSFET's source at a node and its drain to a supply voltage. Additionally, it features a first n-channel MOSFET with its source to ground and drain to the transistor's gate, a second n-channel MOSFET with its source to ground and drain to the second p-channel MOSFET's gate, and a third p-channel MOSFET bridging the node to the second n-channel MOSFET's drain. Furthermore, a fourth p-channel MOSFET in trans-diode setup connects its gate to the third p-channel MOSFET's gate and its source to the supply rail, along with a current source placed between the fourth p-channel MOSFET's drain and ground. This innovative design is aimed at improving the testing processes for transistors.

Career Highlights

Francesco is currently employed at STMicroelectronics International N.V., where he continues to push the boundaries of technology through his research and development efforts. His work has been instrumental in advancing the capabilities of electronic devices.

Collaborations

Francesco collaborates with talented colleagues such as Sandro Rossi and Niccolò Brambilla. Their combined expertise fosters a creative environment that leads to groundbreaking innovations in circuit design.

Conclusion

Francesco Franco is a distinguished inventor whose contributions to circuit design have made a significant impact in the field. His patent for the gate stress test architecture exemplifies his commitment to enhancing electronic reliability. Through his work at STMicroelectronics and collaborations with skilled coworkers, he continues to innovate and inspire in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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