Fengqi Zhang

Title: **Innovative Methods for Structured Graphene Production by Fengqi Zhang**

Introduction

Fengqi Zhang, an accomplished inventor based in Xi'an, China, has made significant contributions to the field of material science through his innovative methods for producing structured graphene. With a keen understanding of graphene's unique properties and applications, Zhang's work has paved the way for advancements in microelectronics.

Latest Patents

Fengqi Zhang holds a patent related to a novel method for preparing structured graphene on a silicon carbide (SiC) substrate, involving a chlorination reaction. The patent outlines a detailed procedure starting from the standard cleaning of a SiC sample chip to the deposition of a silicon dioxide (SiO₂) layer and the subsequent creation of a carbon film through a controlled reaction with chlorine gas at elevated temperatures. The resulting structured graphene exhibits a smooth surface and low porosity, making it highly suitable for applications in microelectronic devices.

Career Highlights

Currently, Fengqi Zhang is affiliated with Xidian University, where he continues to push the boundaries of research in materials science. His passion for innovation has aided in numerous breakthroughs that enhance the functionality and efficiency of electronic components.

Collaborations

Throughout his career, Fengqi Zhang has collaborated with fellow researchers and inventors such as Hui Guo and Keji Zhang. Their joint efforts have fostered a dynamic research environment, allowing for the exchange of ideas and the development of cutting-edge technologies in graphene production and application.

Conclusion

Fengqi Zhang's inventive approach to the preparation of structured graphene highlights his commitment to advancing material science. Through his patent and collaboration efforts, he continues to contribute significantly to innovations that will shape the future of microelectronics, reinforcing the importance of research and development in this rapidly evolving field.