The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Dec. 31, 2012
Xidian University, Xi'an, CN;
Hui Guo, Xi'an, CN;
Keji Zhang, Xi'an, CN;
Yuming Zhang, Xi'an, CN;
Pengfei Deng, Xi'an, CN;
Tianmin Lei, Xi'an, CN;
Fengqi Zhang, Xi'an, CN;
XIDIAN UNIVERSITY, Xi'an, Shaanxi, CN;
Abstract
Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Clreaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiOon the surface of the SiC sample chip and engraving a figure window on the SiOlayer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Clinto the quartz tube, reacting the bare SiC with Clfor 3-8 min at 700-1100° C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200° C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.