Xidian University

Fengqi Zhang

Yuming Zhang

Hui Guo

Keji Zhang

Pengfei Deng

Tianmin Lei

Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Clreaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiOon the surface of the SiC sample chip and engraving a figure window on the SiOlayer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Clinto the quartz tube, reacting the bare SiC with Clfor 3-8 min at 700-1100&#xb0; C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200&#xb0; C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.

Growing community of inventors

Xi'an, China

Fengqi Zhang