Munich, Germany

Felix Simon Winterer

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):

Title: Felix Simon Winterer: Innovator in Semiconductor Technology

Introduction

Felix Simon Winterer is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Winterer holds a patent for a semiconductor device that includes a substrate layer with a floating base region and a gate driver circuit. This semiconductor device features a substrate layer that has a floating base region of a first conductivity type. A first well of a second conductivity type and the floating base region form a first pn junction. Additionally, a first conductive structure is electrically connected to the first well. A barrier region of the second conductivity type and the floating base region form an auxiliary pn junction. Furthermore, a second conductive structure is electrically connected to the floating base region through a rectifying structure. A pull-down structure is configured to produce a voltage drop between the barrier region and the second conductive structure when charge carriers cross the auxiliary pn junction.

Career Highlights

Winterer is currently employed at Infineon Technologies Austria AG, where he continues to advance his work in semiconductor technology. His innovative approach has led to the development of cutting-edge solutions in the industry.

Collaborations

Throughout his career, Winterer has collaborated with talented professionals, including Christian Schippel and Dirk Priefert. These collaborations have further enhanced his contributions to the field.

Conclusion

Felix Simon Winterer is a distinguished inventor whose work in semiconductor technology has made a lasting impact. His innovative patent showcases his expertise and commitment to advancing the field.

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