The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Sep. 26, 2024
Infineon Technologies Austria Ag, Villach, AT;
Lars Müller-Meskamp, Dresden, DE;
Ralf Rudolf, Dresden, DE;
Franz Hirler, Isen, DE;
Fabian Geisenhof, Munich, DE;
Tom Peterhänsel, Dresden, DE;
Annett Winzer, Dresden, DE;
Dirk Priefert, Moers, DE;
Thomas Künzig, Baldham, DE;
Felix Simon Winterer, Munich, DE;
Dirk Manger, Dresden, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A lateral high voltage semiconductor device includes a semiconductor substrate with a frontside and a semiconductor element. The semiconductor element includes: a first semiconductor region of a first conductivity type formed within the semiconductor substrate; a second semiconductor region formed within the semiconductor substrate and spaced apart from the first semiconductor region in a first lateral direction parallel to the frontside; and an extension region adjoining the second semiconductor region. The semiconductor device is configured to control a load current between the first and second semiconductor regions. The extension region extends along the frontside of the semiconductor substrate and includes at least one mesa protruding at the frontside of the semiconductor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile