Company Filing History:
2 out of 74 
1 out of 142 Years Active: 2018-2025
Title: Feilin Xun: Innovator in Multi-Quantum Well Structures and LED Devices
Introduction
Feilin Xun is a prominent inventor based in Xiamen, China. He has made significant contributions to the field of optoelectronics, particularly in the development of multi-quantum well structures and LED devices. With a total of 3 patents to his name, Xun's work has advanced the technology used in lighting and display applications.
Latest Patents
Xun's latest patents include innovative designs for multi-quantum well structures. One notable patent discloses a multi-quantum well structure that features a stress relief layer, an electron-collecting layer, and an active layer. The active layer consists of a first active layer unit that includes alternately stacked potential barrier and potential well sub-layers. At least one of the potential barrier sub-layers incorporates a GaN/AlInGaN stack, enhancing the efficiency of the device. Another patent further refines this design by utilizing a GaN/AlInGaN/GaN stack in the potential barrier sub-layers, demonstrating Xun's commitment to improving LED technology.
Career Highlights
Throughout his career, Feilin Xun has worked with notable companies such as Xiamen Sanan Optoelectronics Co., Ltd. and Xiamen Sanan Optoelectronics Technology Co., Ltd. His experience in these organizations has allowed him to collaborate on cutting-edge research and development projects in the optoelectronics sector.
Collaborations
Xun has collaborated with several talented individuals in his field, including Han Jiang and Yung-Ling Lan. These partnerships have contributed to the successful development of his patented technologies and have fostered innovation within the industry.
Conclusion
Feilin Xun's contributions to the field of optoelectronics through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the development of advanced lighting and display technologies.
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