The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Oct. 17, 2019
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Han Jiang, Wuhu, CN;
Yung-Ling Lan, Wuhu, CN;
Wen-Pin Huang, Wuhu, CN;
Changwei Song, Wuhu, CN;
Li-Cheng Huang, Wuhu, CN;
Feilin Xun, Xiamen, CN;
Chan-Chan Ling, Wuhu, CN;
Chi-Ming Tsai, Wuhu, CN;
Chia-Hung Chang, Wuhu, CN;
Xiamen San'An Optoelectronics Co., Ltd., Fujian, CN;
Abstract
Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/AlInGaN/GaN stack, where 0<x1≤1 and 0≤y1<1, and for the remainder of the potential barrier sub-layers, each of the potential barrier sub-layers is a GaN layer. An LED device including the multi-quantum well structure is also disclosed.