Xiamen San'an Optoelectronics Co., Ltd

Xiamen Sanan Optoelectronics Technology Co., Ltd.

Feilin Xun

Chia-Hung Chang

Chan-Chan Ling

Chi-Ming Tsai

Yung-Ling Lan

Changwei Song

Han Jiang

Wen-Pin Huang

Li-Cheng Huang

Junyong Kang

Jinjian Zheng

Feng Lin

Shuiqing Li

Shutao Liao

Mingyue Wu

Chilun Chou

Zhijie Li

Huanrong Yang

Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/AlInGaN stack, where 0<x1≤1 and 0≤y1<1. An LED device including the multi-quantum well structure is also disclosed.

Multi-quantum well structure and LED device including the same

Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/AlInGaN/GaN stack, where 0&#x3c;x1&#x2264;1 and 0&#x2264;y1&#x3c;1, and for the remainder of the potential barrier sub-layers, each of the potential barrier sub-layers is a GaN layer. An LED device including the multi-quantum well structure is also disclosed.

A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip; temperature control layers are formed with high thermal conductivity material on the side wall of the epitaxial layer and the back surface of the substrate at Zones I/II/III, and control temperature of the epitaxial layer and the substrate; based on different thermal expansion coefficients, lattice constants of the nitride and the substrate at Zones I/II/III are regulated to adjust the biaxial stress to which the nitride; quantum wells change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths; the LED can emit red, green and blue lights by a single chip.

Nitride white-light light-emitting diode

Growing community of inventors

Xiamen, China

Feilin Xun