logo

For the Inventor, By the Inventor

Plano, TX, United States of America

Fei Yang

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: The University of Texas System. Active years: 2022-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fei Yang. Retrieved from https://idiyas.com/inventor/fei-yang-wm4vrj4v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 5.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal4 out of 5,638 
 
The University of Texas System
 patents

Years Active: 2022-2023

Loading Chart...
4 patents (USPTO):Explore Patents
1. 11585844 - Systems, circuits, and methods to detect gate-open failures in MOS based insulated gate transistors (2023-02-21),
2. 11525740 - Methods of measuring real-time junction temperature in silicon carbide power MOSFET devices using turn-on delay, related circuits, and computer program products (2022-12-13),
3. 11474145 - Methods of determining operating conditions of silicon carbide power MOSFET devices associated with aging, related circuits and computer program products (2022-10-18),
4. 11397209 - Methods of monitoring conditions associated with aging of silicon carbide power MOSFET devices in-situ, related circuits and computer program products (2022-07-26),

Title: Fei Yang: Innovator in MOS Technology

Introduction

Fei Yang is a prominent inventor based in Plano, TX, known for his contributions to the field of semiconductor technology. He holds a total of 4 patents that focus on enhancing the performance and reliability of MOS-based devices. His work is instrumental in advancing the capabilities of modern electronic systems.

Latest Patents

Fei Yang's latest patents include innovative systems and methods designed to detect gate-open failures in MOS-based insulated gate transistors. One of his notable inventions involves a detection circuit that measures the drain-source voltage across the transistor. This system utilizes comparator circuits to assess the conduction state of the channel and determine if the gate voltage is sufficient for activation. Additionally, he has developed methods for measuring real-time junction temperature in silicon carbide power MOSFET devices. This method involves applying a gate-source voltage and detecting specific time intervals to ascertain the junction temperature, thereby improving the efficiency of these devices.

Career Highlights

Fei Yang is affiliated with the University of Texas System, where he continues to push the boundaries of semiconductor research. His work has significantly impacted the field, leading to advancements that benefit various applications in electronics and power management.

Collaborations

Fei Yang collaborates with talented individuals such as Bilal Akin and Shi Pu, contributing to a dynamic research environment that fosters innovation and development in semiconductor technologies.

Conclusion

Fei Yang's contributions to the field of MOS technology exemplify the spirit of innovation and dedication to advancing electronic systems. His patents and research efforts continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…