Company Filing History:
Years Active: 2022-2023
Title: Fei Yang: Innovator in MOS Technology
Introduction
Fei Yang is a prominent inventor based in Plano, TX, known for his contributions to the field of semiconductor technology. He holds a total of 4 patents that focus on enhancing the performance and reliability of MOS-based devices. His work is instrumental in advancing the capabilities of modern electronic systems.
Latest Patents
Fei Yang's latest patents include innovative systems and methods designed to detect gate-open failures in MOS-based insulated gate transistors. One of his notable inventions involves a detection circuit that measures the drain-source voltage across the transistor. This system utilizes comparator circuits to assess the conduction state of the channel and determine if the gate voltage is sufficient for activation. Additionally, he has developed methods for measuring real-time junction temperature in silicon carbide power MOSFET devices. This method involves applying a gate-source voltage and detecting specific time intervals to ascertain the junction temperature, thereby improving the efficiency of these devices.
Career Highlights
Fei Yang is affiliated with the University of Texas System, where he continues to push the boundaries of semiconductor research. His work has significantly impacted the field, leading to advancements that benefit various applications in electronics and power management.
Collaborations
Fei Yang collaborates with talented individuals such as Bilal Akin and Shi Pu, contributing to a dynamic research environment that fosters innovation and development in semiconductor technologies.
Conclusion
Fei Yang's contributions to the field of MOS technology exemplify the spirit of innovation and dedication to advancing electronic systems. His patents and research efforts continue to influence the industry positively.