The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Jun. 10, 2020
Board of Regents, the University of Texas System, Austin, TX (US);
Enes Ugur, Richardson, TX (US);
Bilal Akin, Richardson, TX (US);
Fei Yang, Plano, TX (US);
Shi Pu, Plano, TX (US);
Chi Xu, Plano, TX (US);
Board of Regents, The University of Texas System, Austin, TX (US);
Abstract
Embodiments according to the invention can provide methods of testing a SiC MOSFET, that can include applying first and second voltage levels across a gate-source junction of a SiC MOSFET and measuring first and second voltage drops across a reverse body diode included in the SiC MOSFET responsive to the first and second voltage levels, respectively, to provide an indication of a degradation of a gate oxide of the SiC MOSFET and an indication of contact resistance of the SiC MOSFET, respectively.