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For the Inventor, By the Inventor

Boise, ID, United States of America

Fawad Ahmed

USPTO Granted Patents = 19 

 

Average Co-Inventor Count = 4.0

ph-index = 6

Forward Citations = 106(Granted Patents)


Company Filing History:

goldMedal19 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 1999-2020

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19 patents (USPTO):
1. 10854611 - Memory cells and memory arrays (2020-12-01),
2. 10847516 - Memory cells and memory arrays (2020-11-24),
3. 10361204 - Memory cells and memory arrays (2019-07-23),
4. 10319724 - Memory cells and memory arrays (2019-06-11),
5. 10079235 - Memory cells and memory arrays (2018-09-18),
6. 10056386 - Memory cells and memory arrays (2018-08-21),
7. 9391206 - Methods of forming transistors (2016-07-12),
8. 9263341 - Methods of forming transistors (2016-02-16),
9. 9147729 - Methods of forming transistors (2015-09-29),
10. 9064692 - DRAM cells and methods of forming silicon dioxide (2015-06-23),
11. 7119397 - Double blanket ion implant method and structure (2006-10-10),
12. 6797596 - Sacrificial deposition layer as screening material for implants into a wafer during the manufacture of a semiconductor device (2004-09-28),
13. 6693014 - Method of improving static refresh (2004-02-17),
14. 6482707 - Method of improving static refresh (2002-11-19),
15. 6410951 - Structure for improving static refresh (2002-06-25),

Title: Fawad Ahmed: Innovator in Memory Technology

Introduction

Fawad Ahmed, an accomplished inventor based in Boise, ID, has made significant contributions to the field of memory technology. With a portfolio of 19 patents, his work focuses on advancing the capabilities and efficiency of memory cells and arrays.

Latest Patents

Among his latest innovations, Fawad has developed memory cells that incorporate vertical stacking of transistors to optimize performance. One embodiment includes a memory cell featuring a first transistor supported by a semiconductor base, with second and third transistors arranged above it in a vertical configuration. Each transistor is equipped with multiple source/drain regions that facilitate enhanced data handling capabilities. Additionally, a read and write bitline system is integrated, enhancing the functionality of the memory cell. Another inventive design includes a semiconductor pillar that connects channel and source/drain regions for the second and third transistors, further improving the efficiency of memory operations.

Career Highlights

Fawad Ahmed is associated with Micron Technology Incorporated, a leading organization in memory and storage solutions. His work at Micron has allowed him to push the boundaries of existing technology and contribute to the advancement of innovative memory solutions.

Collaborations

Throughout his career, Fawad has collaborated with notable colleagues such as Suraj J Mathew and Raghunath Singanamalla. These collaborations have fostered a creative environment that encourages the sharing of knowledge and expertise in the field of memory technology.

Conclusion

Fawad Ahmed's innovative work in memory cell design has set him apart as a prominent inventor in the technology sector. His patents reflect not only his expertise but also his commitment to enhancing memory technology. As he continues to develop groundbreaking solutions at Micron Technology, the impact of his inventions on the industry will undoubtedly be profound.

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