This inventor holds 2 USPTO granted patents. Top assignee: Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2019-2021.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2019-2021
Title: Fansheng Kung: Innovator in Memory Device Technology
Introduction
Fansheng Kung is a notable inventor based in Shanghai, China. He has made significant contributions to the field of memory devices, holding a total of 2 patents. His work focuses on advancing the technology behind memory cells, which are crucial components in modern electronic devices.
Latest Patents
Fansheng Kung's latest patents include innovative designs for memory devices. One patent describes a memory device that consists of one or more adjacent memory cells on a substrate. Each memory cell features a first dielectric layer, a floating gate, a second dielectric layer, a control gate layer, and a first mask layer. The control gate layer is designed with a silicide layer that covers at least a sidewall of its second portion. This design allows for improved functionality and efficiency in memory storage.
Another patent outlines a method for forming memory devices. This method involves a substrate with memory cells, where the control gate layer has a silicide layer that is strategically sized and positioned. The process includes forming a fourth dielectric layer on the substrate and creating an opening that exposes a portion of the substrate between adjacent memory cells. This innovative approach enhances the performance of memory devices.
Career Highlights
Fansheng Kung is currently employed at Semiconductor Manufacturing International Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other talented professionals and contribute to cutting-edge technology in memory devices.
Collaborations
One of his notable coworkers is Sheng Fen Chiu. Together, they have worked on various projects that push the boundaries of memory technology.
Conclusion
Fansheng Kung's contributions to memory device technology are significant and impactful. His innovative patents and work at Semiconductor Manufacturing International Corporation highlight his role as a leading inventor in this field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile