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For the Inventor, By the Inventor

Fremont, CA, United States of America

Fanglin Zhang

LinkedIn
USPTO Granted Patents = 16 

 

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 114(Granted Patents)


Location History:

  • San Jose, CA (US) (2008 - 2009)
  • Fremont, CA (US) (2011 - 2024)

Company Filing History:

goldMedal13 out of 4,549 
 
Sandisk Technologies Inc.
 patents
silverMedal3 out of 1,339 
 
Sandisk Corporation
 patents

Years Active: 2008-2025

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16 patents (USPTO):Explore Patents
1. 12197783 - Command and address sequencing in parallel with data operations (2025-01-14),
2. 11935599 - Burst programming of a NAND flash cell (2024-03-19),
3. 11705203 - Digital temperature compensation filtering (2023-07-18),
4. 11605436 - Countermeasure modes to address neighbor plane disturb condition in non-volatile memory structures (2023-03-14),
5. 11587630 - Program with consecutive verifies for non-volatile memory (2023-02-21),
6. 11521691 - Triggering next state verify in program loop for nonvolatile memory (2022-12-06),
7. 11521686 - Memory apparatus and method of operation using state bit-scan dependent ramp rate for peak current reduction during program operation (2022-12-06),
8. 11361835 - Countermeasure for reducing peak current during programming by optimizing timing of latch scan operations (2022-06-14),
9. 11355208 - Triggering next state verify in progam loop for nonvolatile memory (2022-06-07),
10. 8755234 - Temperature based compensation during verify operations for non-volatile storage (2014-06-17),
11. 8582381 - Temperature based compensation during verify operations for non-volatile storage (2013-11-12),
12. 8169831 - High speed sense amplifier array and method for non-volatile memory (2012-05-01),
13. 7974134 - Voltage generator to compensate sense amplifier trip point over temperature in non-volatile memory (2011-07-05),
14. 7957197 - Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node (2011-06-07),
15. 7474561 - Variable program voltage increment values in non-volatile memory program operations (2009-01-06),

Title: Innovations of Fanglin Zhang: A Pioneer in Memory Device Technology

Introduction

Fanglin Zhang is a notable inventor based in Fremont, California, recognized for his significant contributions to memory device technology. With a total of 16 patents to his name, Zhang has made remarkable advancements that enhance the performance and efficiency of memory operations.

Latest Patents

Among his latest innovations is a patent titled "Command and address sequencing in parallel with data operations." This invention introduces a command/address sequence associated with read/write operations for memory devices, utilizing an existing test data bus in a novel manner. By eliminating the need for an I/O bus for the command/address sequence, this technology allows for parallel execution of command/address sequencing and read/write operations, effectively removing performance bottlenecks. Another significant patent is "Burst programming of a NAND flash cell," which presents a fast burst program sequence that reduces overall NAND flash programming time. This sequence maintains a charge pump in an ON state and avoids fully discharging the WL/BLs at the end of each programming phase, leading to substantial time savings compared to traditional cache program sequences.

Career Highlights

Fanglin Zhang has worked with prominent companies in the technology sector, including SanDisk Technologies Inc. and SanDisk Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to the advancement of memory technology.

Collaborations

Throughout his career

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