Hsinchu, Taiwan

Fang-Yun Liu

This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fang-Yun Liu. Retrieved from https://idiyas.com/inventor/fang-yun-liu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Fang-Yun Liu in Semiconductor Technology

Introduction

Fang-Yun Liu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Fang-Yun Liu holds a patent for a semiconductor device. This device includes a substrate, a first transistor disposed on the substrate, and a second transistor in proximity to the first transistor. It features at least one interlayer dielectric layer covering both transistors. Additionally, it incorporates a first stress-inducing dummy metal pattern directly above the first transistor and a second stress-inducing dummy metal pattern above the second transistor. This innovative design aims to improve the functionality of semiconductor devices.

Career Highlights

Fang-Yun Liu is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other talented professionals in the field.

Collaborations

Some of his notable coworkers include Po-Yu Yang and Chien-Tung Yue. Their collective expertise contributes to the advancement of semiconductor technologies.

Conclusion

Fang-Yun Liu's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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