United Microelectronics Corp.

Fang-Yun Liu

Po-Yu Yang

Cheng-Hsiung Chen

Kuo-Liang Yeh

Mu-Kai Tsai

Jinn-Horng Lai

Chien-Tung Yue

A semiconductor device includes a substrate, a first transistor disposed on the substrate, a second transistor in proximity to the first transistor on the substrate, at least one interlayer dielectric layer covering the first transistor and the second transistor, a first stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the first transistor, and a second stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the second transistor.

Growing community of inventors

Hsinchu, Taiwan

Fang-Yun Liu