Boise, ID, United States of America

Evan C Pearson

USPTO Granted Patents = 4 

Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2021-2024

where 'Filed Patents' based on already Granted Patents

4 patents (USPTO):

Title: Innovations of Evan C Pearson

Introduction

Evan C Pearson is a notable inventor based in Boise, ID (US), recognized for his contributions to memory device technology. With a total of four patents to his name, he has made significant advancements in the field of memory systems.

Latest Patents

Among his latest patents is the "Memory with post-packaging master die selection." This invention involves memory devices and systems that utilize a plurality of memory dies, each equipped with a command/address decoder. These decoders are designed to receive command and address signals from external contacts and transmit decoded signals to other memory dies. Additionally, the circuitry allows for the enabling or disabling of individual command/address decoders after the dies are packaged. Another significant patent is the "Memory with adjustable TSV delay." This apparatus includes multiple memory dies and a through-silicon via (TSV) that transmits signals to these dies. The circuitry associated with the TSV can introduce propagation delays, allowing for the alignment of internal timings among the memory dies.

Career Highlights

Evan C Pearson is currently employed at Micron Technology Incorporated, a leading company in memory and storage solutions. His work focuses on enhancing the performance and efficiency of memory devices through innovative designs and methodologies.

Collaborations

Evan has collaborated with notable colleagues such as Dale Herber Hiscock and John H Gentry, contributing to the advancement of memory technology through teamwork and shared expertise.

Conclusion

Evan C Pearson's contributions to memory device technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to shape the future of memory systems and their applications.

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