Company Filing History:
Years Active: 1998-2001
Title: Eung Joon Park: Innovator in Non-Volatile Memory Technology
Introduction
Eung Joon Park is a notable inventor based in Fremont, CA, who has made significant contributions to the field of non-volatile memory technology. With a total of 3 patents to his name, his work has advanced the capabilities of memory cells and charge pump systems.
Latest Patents
One of his latest patents is for a non-volatile memory cell capable of being programmed and erased through substantially separate areas of one of its drain-side and source-side regions. This innovative design includes a drain region and a source region separated by a channel region, with a tunneling dielectric layer extending over the channel region and portions of the drain and source regions. The memory cell is programmed through hot electron injection and erased through Fowler-Nordheim tunneling, allowing for efficient operation. Another significant patent involves a charge pump circuit that features improved programming current distribution. This circuit utilizes a native MOS device as a charge transfer device, coupled with a parallel-coupled MOS pair, to enhance the performance of voltage pump circuits.
Career Highlights
Eung Joon Park has worked with several prominent companies in the technology sector, including Integrated Silicon Solution Incorporated and Azalea Microelectronics Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in memory technology.
Collaborations
Throughout his career, Eung Joon Park has collaborated with talented individuals such as Hsi-Hsien Hung and Hsiao-Lun Lee. These partnerships have fostered an environment of creativity and innovation, leading to advancements in their respective fields.
Conclusion
Eung Joon Park's contributions to non-volatile memory technology and charge pump systems highlight his role as a significant inventor in the tech industry. His patents reflect a commitment to innovation and excellence in engineering.