Eun-Jin Song

Title: Eun-Jin Song: Innovator in Substrate Processing Technologies

Introduction

Eun-Jin Song is a notable inventor based in Yongin, South Korea. She has made significant contributions to the field of substrate processing, holding a total of 3 patents. Her innovative methods have advanced the technology used in semiconductor manufacturing.

Latest Patents

Eun-Jin Song's latest patents include a "Method for treating substrate using boron compound" and a "Method of processing substrate." The first patent describes a substrate treating method aimed at removing dielectric by-products produced during the etching of dielectric films. This method involves providing a gaseous boron compound into a reaction chamber to eliminate the dielectric by-product, followed by purging the chamber. The boron compound is represented by BX, where X can be hydrogen, alkyl, amino, or halogen, and n is a natural number greater than or equal to 1. The second patent outlines a method for processing a substrate that comprises an ONO stack, which includes alternating layers of silicon oxide and silicon nitride. This method consists of primarily dry-etching the silicon nitride layers, generating oxygen radicals to process the silicon oxide layers, and then secondarily dry-etching the silicon nitride layers.

Career Highlights

Eun-Jin Song has worked with several companies throughout her career, including Tes Co., Ltd and T.e.s., Inc. Her experience in these organizations has allowed her to refine her skills and contribute to the development of advanced substrate processing technologies.

Collaborations

Eun-Jin has collaborated with notable colleagues such as Se-Woong Bae and Bong-Soo Kwon. These partnerships have fostered innovation and have been instrumental in her research and development efforts.

Conclusion

Eun-Jin Song is a pioneering inventor whose work in substrate processing has led to significant advancements in the semiconductor industry. Her patents reflect her commitment to innovation and her expertise in the field.