The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Aug. 25, 2022
Applicant:
Tes Co., Ltd, Yongin-si, KR;
Inventors:
Assignee:
TES CO., LTD, Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32091 (2013.01); H01J 37/3244 (2013.01); H01L 21/02126 (2013.01);
Abstract
The present invention relates to a substrate processing method for selectively etching a silicon nitride layer on a substrate on which silicon oxide layers and silicon nitride layers are alternately stacked, the method including plasma etching the silicon nitride layers using plasma of a plurality of gases, wherein the plurality of gases include a first gas containing fluorine excluding nitrogen trifluoride (NF) and a second gas containing hydrogen, and the etch profile in the thickness direction of the silicon nitride layers is controlled by adjusting the atomic ratio of fluorine to hydrogen included in the plurality of gases.