Suwon-si, South Korea

Eun-ji Jung

USPTO Granted Patents = 6 

Average Co-Inventor Count = 6.7

ph-index = 3

Forward Citations = 243(Granted Patents)


Location History:

  • Gyeongi-do, KR (2011)
  • Suwon-si, KR (2008 - 2013)

Company Filing History:


Years Active: 2008-2013

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6 patents (USPTO):Explore Patents

Title: Eun-ji Jung: Innovator in Semiconductor Technology

Introduction

Eun-ji Jung is a prominent inventor based in Suwon-si, South Korea. She has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. Her innovative approaches have advanced the manufacturing processes of semiconductor devices.

Latest Patents

One of her latest patents is focused on a semiconductor device and method of manufacturing the same. This method involves forming a trench for buried type wires by etching a substrate, creating first and second oxidation layers, and subsequently forming buried type wires insulated from each other. Another notable patent details a method of forming a buried gate electrode that prevents voids in the silicide layer of the gate electrode. This process includes forming a trench, applying a conformal gate oxide layer, and annealing the substrate to create a metal silicide layer.

Career Highlights

Eun-ji Jung is currently employed at Samsung Electronics Co., Ltd., where she continues to push the boundaries of semiconductor innovation. Her work has been instrumental in enhancing the efficiency and reliability of semiconductor devices.

Collaborations

Eun-ji has collaborated with notable colleagues, including Byung-Hee Kim and Hyun-Su Kim, contributing to a dynamic research environment that fosters innovation.

Conclusion

Eun-ji Jung's contributions to semiconductor technology exemplify her dedication to innovation and excellence in her field. Her patents reflect her expertise and commitment to advancing technology in meaningful ways.

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