The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Feb. 11, 2010
Woong-hee Sohn, Seoul, KR;
Byung-hee Kim, Seoul, KR;
Dae-yong Kim, Yongin-si, KR;
Min-sang Song, Seongnam-si, KR;
Gil-heyun Choi, Seoul, KR;
Kwang-jin Moon, Suwon-si, KR;
Hyun-su Kim, Hwaseong-si, KR;
Jang-hee Lee, Yongin-si, KR;
Eun-ji Jung, Suwon-si, KR;
Eun-ok Lee, Hwaseong-si, KR;
Woong-hee Sohn, Seoul, KR;
Byung-hee Kim, Seoul, KR;
Dae-yong Kim, Yongin-si, KR;
Min-sang Song, Seongnam-si, KR;
Gil-heyun Choi, Seoul, KR;
Kwang-jin Moon, Suwon-si, KR;
Hyun-su Kim, Hwaseong-si, KR;
Jang-hee Lee, Yongin-si, KR;
Eun-ji Jung, Suwon-si, KR;
Eun-ok Lee, Hwaseong-si, KR;
Abstract
A method of manufacturing a semiconductor device includes: forming a trench for forming buried type wires by etching a substrate; forming first and second oxidation layers on a bottom of the trench and a wall of the trench, respectively; removing a part of the first oxidation layer and the entire second oxidation layer; and forming the buried type wires on the wall of the trench by performing a silicide process on the wall of the trench from which the second oxidation layer is removed. As a result, the buried type wires are insulated from each other.