Moscow, Russia

Eugeni E Egorov


Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2005-2008

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4 patents (USPTO):Explore Patents

Title: Eugeni E Egorov: Innovator in Optical Proximity Correction

Introduction

Eugeni E Egorov is a prominent inventor based in Moscow, Russia. He has made significant contributions to the field of optical proximity correction (OPC) with a total of 4 patents to his name. His work focuses on optimizing the design and manufacturing processes of integrated circuits, which are essential for modern electronics.

Latest Patents

Egorov's latest patents include a method and apparatus for optimizing fragmentation of boundaries for optical proximity correction (OPC) purposes. This invention aims to balance the number of vertices and the flexibility of the boundary, recovering fragmentation according to the process intensity profile along the ideal edge position to achieve optimal decisions for OPC. Another notable patent is the gradient method of mask edge correction, which utilizes a newly defined cost function to make mask edge corrections for high-density chip designs.

Career Highlights

Throughout his career, Eugeni E Egorov has worked with notable companies such as LSI Logic Corporation and LSI Corporation. His experience in these organizations has allowed him to develop and refine his innovative techniques in the semiconductor industry.

Collaborations

Egorov has collaborated with several professionals in his field, including Marina M Medvedeva and Stanislav V Aleshin. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Eugeni E Egorov is a distinguished inventor whose work in optical proximity correction has made a significant impact on the semiconductor industry. His innovative patents and collaborations highlight his dedication to advancing technology in this critical field.

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