Fremont, CA, United States of America

Esmat Z Hamdy

USPTO Granted Patents = 15 

Average Co-Inventor Count = 3.2

ph-index = 12

Forward Citations = 1,587(Granted Patents)


Company Filing History:


Years Active: 1989-2019

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15 patents (USPTO):Explore Patents

Title: Biography of Esmat Z Hamdy

Introduction: Esmat Z Hamdy is an accomplished inventor based in Fremont, CA (US). She has made significant contributions to the field of technology, particularly in the development of advanced memory systems. With a total of 15 patents to her name, her work has had a profound impact on the industry.

Latest Patents: One of her latest patents is the "Low leakage ReRAM FPGA configuration cell." This innovative design features a low-leakage resistive random access memory cell that includes a complementary pair of bit lines and a switch node. A first ReRAM device is connected to one of the bit lines, while a p-channel transistor connects the ReRAM device to the switch node. Additionally, a second ReRAM device is linked to another bit line, with an n-channel transistor facilitating the connection to the switch node.

Career Highlights: Throughout her career, Esmat has worked with notable companies such as Actel Corporation, Inc. and Microsemi SoC Corporation. Her expertise in memory technology has been instrumental in advancing the capabilities of programmable logic devices.

Collaborations: Esmat has collaborated with esteemed colleagues, including Amr M Mohsen and John L McCollum. These partnerships have fostered innovation and contributed to the successful development of her patented technologies.

Conclusion: Esmat Z Hamdy's contributions to the field of technology

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