Erik Janzen

Title: The Innovative Contributions of Erik Janzen

Introduction

Erik Janzen is a notable inventor based in Borensberg, Sweden, with a remarkable portfolio of 12 patents. His work primarily focuses on advancements in semiconductor technology, particularly in silicon carbide (SiC) applications. Janzen's innovative methods have significantly contributed to the field of electronics and materials science.

Latest Patents

Among his latest patents, Janzen has developed a method for the introduction of an impurity dopant in SiC. This method involves implanting ions into the semiconductor layer, resulting in a near-surface layer that becomes doped and amorphous. Following this, the semiconductor layer undergoes annealing at a specific temperature, allowing the dopant to diffuse into a non-implanted sublayer beneath the surface. Another significant patent is for a device designed for epitaxially growing objects of SiC. This method utilizes a susceptor with circumferential walls to heat the substrate and source material above a critical temperature, facilitating the growth process.

Career Highlights

Throughout his career, Janzen has worked with prominent companies such as Abb Research Ltd. and Okmetic Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and contribute to various innovative projects.

Collaborations

Janzen has collaborated with notable professionals in his field, including Andrei Konstantinov and Christopher Ian Harris. These collaborations have further enhanced his research and development efforts, leading to significant advancements in semiconductor applications.

Conclusion

Erik Janzen's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative methods continue to influence advancements in electronics and materials science.