The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
May. 08, 1995
Applicant:
Inventors:
Christopher Harris, Sollentuna, SE;
Andrei Konstantinov, Linkoping, SE;
Erik Janzen, borensberg, SE;
Assignee:
ABB Research Ltd., Zurich, CH;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438520 ; 438931 ;
Abstract
A method for introduction of an impurity dopant into a semiconductor layer of SiC comprises the step of ion implantation of the dopant in the semiconductor layer at a low temperature. The ion implantation is carried out in such a way that a doped and amorphous near-surface layer is formed, and the implantation step is followed by a step of annealing the semiconductor layer at such a high temperature that the dopant diffuses into the non-implanted sub-layer of the semiconductor layer following the near-surface layer.