The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Jul. 15, 1998
Applicant:
Inventors:
Christopher Harris, Sollentuna, SE;
Andrei Konstantinov, Linkoping, SE;
Erik Janzen, Borensberg, SE;
Assignee:
ABB Research Ltd., Zurich, CH;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438520 ; 438931 ;
Abstract
A method for introducing an impurity dopant into a semiconductor layer of SiC is provided. Ions are implanted into the semiconductor layer so that a near surface of the semiconductor layer becomes doped and amorphous. The semiconductor layer is then annealed at a temperature so that the dopant diffuses into a non-implanted sublayer of the semiconductor layer below the near surface layer.