This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1998.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1998
Title: Innovations of Eric Wang in Capacitor Technology
Introduction
Eric Wang is a notable inventor based in Chinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of cylindrical capacitors. His innovative approach has led to the development of a patented method that enhances the efficiency of DRAM manufacturing.
Latest Patents
Eric Wang holds a patent for a "Method for forming a cylindrical capacitor." This invention describes an improved process for fabricating cylindrical capacitors used in DRAMs. The method eliminates the need for a silicon nitride etch stop layer, which is typically used to halt etching during the formation of the dielectric cylinder. Instead, Wang's invention employs two dielectric layers with different etch rates, allowing for the successful completion of the cylindrical substrate without damaging the underlying support layer. This innovative approach utilizes O.sub.3 TEOS for fast etching and BPTEOS for slow etching, achieving a differential etch rate of approximately 10 times.
Career Highlights
Eric Wang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to work on advancements in semiconductor technology. His expertise and innovative mindset have positioned him as a valuable asset in the industry. With a total of 1 patent, Wang's contributions are recognized for their potential to improve manufacturing processes.
Collaborations
Eric collaborates with Julie Huang, a fellow professional in the semiconductor field. Their teamwork exemplifies the importance of collaboration in driving innovation and achieving technological advancements.
Conclusion
Eric Wang's innovative methods in capacitor technology demonstrate his commitment to enhancing semiconductor manufacturing processes. His patent reflects a significant step forward in the industry, showcasing the potential for improved efficiency and effectiveness in DRAM production.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile