Eri Tsukada

Title: Eri Tsukada: Innovator in Silicon Oxide Film Technology

Introduction

Eri Tsukada is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of materials science, particularly in the development of methods for forming silicon oxide films. With a total of 3 patents to her name, Tsukada's work has implications for various technological applications.

Latest Patents

One of her latest patents is a method of forming silicon oxide containing films. This innovative process involves several steps, including providing a treatment substrate within a reaction chamber, purging the gas within the chamber by feeding an inert gas under reduced pressure at a substrate temperature of 50 to 400 degrees Celsius, and adsorbing a silicon compound on the treatment substrate. The method continues with purging the unadsorbed silicon compound and introducing a pulse of ozone-containing mixed gas to produce silicon oxide through an oxidation reaction. This process can be repeated as necessary to achieve the desired thickness on the substrate.

Career Highlights

Eri Tsukada has worked with notable companies such as Air Liquide Société Anonyme pour l'Étude et l'Exploitation des Procédés Georges Claude and Air Liquide, Société Anonyme à Directoire et Conseil de Surveillance pour l'Étude et l'Exploitation des Procédés Georges Claude. Her experience in these organizations has allowed her to refine her expertise in the field of materials science and innovation.

Collaborations

Throughout her career, Tsukada has collaborated with esteemed colleagues, including Christian Dussarrat and Julien Gatineau. These partnerships have contributed to her success and the advancement of her research.

Conclusion

Eri Tsukada's innovative work in silicon oxide film technology showcases her expertise and dedication to advancing materials science. Her contributions continue to influence the industry and inspire future innovations.