L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

L'air Liquide, Societe Anonyme a Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude

Eri Tsukada

Christian Dussarrat

Julien Gatineau

Kazutaka Yanagita

Ikuo Suzuki

Jean-Marc Girard

Ashutosh Misra

Benjamin Jurcik

Matthew L Fisher

A method of forming a silicon oxide film, comprising the steps of:

Method of forming silicon oxide containing films

A method of forming a silicon oxide film, comprising the steps of: &#x2014;providing a treatment substrate within a reaction chamber; &#x2014;purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 400 C, &#x2014;adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, &#x2014;purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, &#x2014;at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and&#x2014;repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.

Method for forming dielectric or metallic films

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Tokyo, Japan

Eri Tsukada