The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Feb. 24, 2005
Ashutosh Misra, Plano, TX (US);
Matthew Fisher, Allen, TX (US);
Benjamin Jurcik, Richardson, TX (US);
Christian Dussarrat, Tsukuba, JP;
Eri Tsukada, Ibaraki, JP;
Jean-marc Girard, Paris, FR;
Ashutosh Misra, Plano, TX (US);
Matthew Fisher, Allen, TX (US);
Benjamin Jurcik, Richardson, TX (US);
Christian Dussarrat, Tsukuba, JP;
Eri Tsukada, Ibaraki, JP;
Jean-Marc Girard, Paris, FR;
Abstract
Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.