Location History:
- Ulm-Lehr, DE (2000 - 2008)
- Ulm/Lehr, DE (2009)
Company Filing History:
Years Active: 2000-2009
Title: Erhard Kohn: Innovator in Semiconductor Technology
Introduction
Erhard Kohn is a notable inventor based in Ulm-Lehr, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on sensor elements and field effect transistors, showcasing his expertise in innovative materials and structures.
Latest Patents
One of Kohn's latest patents is for sensor elements with cantilevered bar structures made of semiconductors based on group III-nitride. This invention relates to a sensor element designed to determine various physical parameters such as pressure, temperature, force, deflection, or acceleration. The sensor features a substrate base with a homogeneous semiconductor layer that has specific electrical conducting contacts for generating output signals.
Another significant patent involves a heterostructure with rear-face donor doping. This invention pertains to a field effect transistor that includes a buffer layer or substrate, with a channel made of piezopolar material. The design ensures that piezocharges at the boundary interfaces are effectively compensated, enhancing the performance of the device.
Career Highlights
Throughout his career, Erhard Kohn has worked with various companies, including Microgan GmbH. His experience in the semiconductor industry has allowed him to develop cutting-edge technologies that push the boundaries of current capabilities.
Collaborations
Kohn has collaborated with notable professionals in the field, including Ingo Daumiller and Markus Kamp. These partnerships have contributed to the advancement of his innovative projects and patents.
Conclusion
Erhard Kohn's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence the development of advanced sensor technologies and field effect transistors.