The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Mar. 18, 2004
Mike Kunze, Senden, DE;
Ingo Daumiller, Dietenheim, DE;
Peter Benkart, Stotzard, DE;
Erhard Kohn, Ulm/Lehr, DE;
Mike Kunze, Senden, DE;
Ingo Daumiller, Dietenheim, DE;
Peter Benkart, Stotzard, DE;
Erhard Kohn, Ulm/Lehr, DE;
Other;
Abstract
The present invention relates to a sensor element which has a semiconductor structure based on a Group III-nitride. The semiconductor sensor element serves for determining the pressure, the temperature, a force, a deflection or an acceleration. It has a substrate base, disposed thereon, a homogeneous semiconductor layer based on a Group III-nitride, the surface of the homogeneous semiconductor layerorientated towards the substrate basehaving at least partially a spacing from the surface of the substrate base orientated towards the homogeneous semiconductor layerf, and being distinguished in that at least two electrical conducting contactsfor conducting an electrical output signal, which can be generated by the homogeneous semiconductor layerf, are disposed on, at or under the homogeneous semiconductor layerf or are integrated in the latter.