Microgan Gmbh

Other

Daimler Chrysler Ag

Erhard Kohn

Ingo Daumiller

Markus Kamp

Matthias Seyboth

Reinhard Zachai

Mike Kunze

Herbert Guettler

Guntmar Schulz

Andre Floeter

Peter Bodo Gluche

Paul Ziemann

Peter Benkart

The present invention relates to a sensor element which has a semiconductor structure based on a Group III-nitride. The semiconductor sensor element serves for determining the pressure, the temperature, a force, a deflection or an acceleration. It has a substrate base, disposed thereon, a homogeneous semiconductor layer based on a Group III-nitride, the surface of the homogeneous semiconductor layerorientated towards the substrate basehaving at least partially a spacing from the surface of the substrate base orientated towards the homogeneous semiconductor layerf, and being distinguished in that at least two electrical conducting contactsfor conducting an electrical output signal, which can be generated by the homogeneous semiconductor layerf, are disposed on, at or under the homogeneous semiconductor layerf or are integrated in the latter.

Sensor elements with cantilevered bar structures made of semiconductors based on group III-nitride

The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated.

Heterostructure with rear-face donor doping

A growth substrate having growth nuclei made of diamond and/or diamond-like carbon arranged on its growth surface, the orientation of over 50% of the growth nuclei deviating by less than 10.degree. from the crystal orientation defined by the growth substrate corresponding to Miller's indices (h, k, l) and the nucleus density changes between the center of the growth substrate and a distance of maximally 15 mm from the center by maximally 80%. The method also relates to a process for the growth substrate's manufacture.

Growth substrate having growth nuclei made of diamonds and/or

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Ulm-Lehr, Germany

Erhard Kohn