The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Jun. 01, 2001
Erhard Kohn, Ulm-Lehr, DE;
Ingo Daumiller, Iany, DE;
Markus Kamp, Ulm, DE;
Matthias Seyboth, Beimerstetten, DE;
Erhard Kohn, Ulm-Lehr, DE;
Ingo Daumiller, Iany, DE;
Markus Kamp, Ulm, DE;
Matthias Seyboth, Beimerstetten, DE;
Microgan GmbH, , DE;
Abstract
The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated.