Location History:
- Beirnerstetten, DE (2008)
- Beimerstetten, DE (2008)
Company Filing History:
Years Active: 2008
Title: Matthias Seyboth: Innovator in Field Effect Transistors
Introduction
Matthias Seyboth is a notable inventor based in Munich, Germany. He has made significant contributions to the field of electronics, particularly in the development of field effect transistors. With a total of 2 patents to his name, Seyboth's work is recognized for its innovative approach to semiconductor technology.
Latest Patents
Seyboth's latest patents include advancements in heterostructures with rear-face donor doping. The first patent describes a field effect transistor that features a heterostructure with a buffer layer or substrate. In this design, a channel is arranged on the buffer layer or substrate, with a capping layer placed on top of the channel. The channel is composed of a piezopolar material, and the regions around the boundary interfaces are doped to compensate for piezocharges that occur at these interfaces. This innovative approach enhances the performance and efficiency of the transistor.
Career Highlights
Matthias Seyboth is currently employed at Microgan GmbH, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the understanding and application of field effect transistors in various electronic devices.
Collaborations
Seyboth collaborates with talented individuals in his field, including Erhard Kohn and Ingo Daumiller. These partnerships foster a creative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Matthias Seyboth is a prominent figure in the realm of field effect transistors, with a focus on enhancing semiconductor technology. His contributions through patents and collaborations highlight his commitment to innovation in the electronics industry.