Erhard Kohn

Title: The Innovative Contributions of Erhard Kohn

Introduction

Erhard Kohn is a notable inventor based in Titusville, NJ, who has made significant contributions to the field of semiconductor technology. With a total of three patents to his name, Kohn's work primarily focuses on high electron mobility transistors (HEMTs) and modulation-doped field effect transistors.

Latest Patents

Kohn's latest patents include a groundbreaking HEMT structure that features a donor layer of aluminum gallium arsenide (AlGaAs). This innovative design allows for the formation of a two-dimensional electron gas (2DEG) in a proximate buffer layer of gallium arsenide. The donor layer is characterized by a composition profile that includes varying concentrations of aluminum, which enhances the performance of the transistor. Another significant patent is for a modulation-doped high electron mobility transistor with an n-i-p-i structure. This invention incorporates an undoped semiconductor layer and a mechanism for supplying charge carriers, which modulates hole and electron density to inhibit current flow effectively.

Career Highlights

Throughout his career, Kohn has worked with prominent organizations, including Siemens Corporate Research & Support, Inc. and Siemens Corporate Research, Inc. His experience in these companies has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Kohn has collaborated with esteemed colleagues such as Karl R. Hofmann and Mark E. Schneider. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Erhard Kohn's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative work continues to impact the industry and pave the way for future advancements.